Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase
Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase
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DOI：
10.1143/apex.4.011101
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发表时间：
2011-01-01
影响因子：
2.3
通讯作者：
Shiratani, Masaharu
中科院分区：
文献类型：
--
作者：
Itagaki, Naho;Kuwahara, Kazunari;Shiratani, Masaharu
我们提出了一种通过原子添加介导的非晶化来生长氧化物晶体的新方法。利用这种方法，通过氮原子介导成功地证明了 ZnO 从非晶相的固相结晶 (SPC)。所得SPC-ZnO薄膜高度取向，结晶度高于传统溅射制备的薄膜。通过使用SPC-ZnO作为缓冲层，ZnO:Al (AZO)薄膜的电阻率显着降低。获得了20 nm厚的AZO薄膜，其电阻率为5×10(-4)Ω·cm，在400-2500 nm的宽波长范围内光学透过率高于80%。 (C) 2011 日本应用物理学会
We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfully demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of 5 x 10(-4) Omega cm and an optical transmittance higher than 80% in a wide wavelength range of 400-2500 nm have been obtained. (C) 2011 The Japan Society of Applied Physics