Retention Testing Methodology for STTRAM
Retention Testing Methodology for STTRAM
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STTRAM 保留测试方法
DOI：
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发表时间：
2016
影响因子：
2
通讯作者：
Srikant Srinivasan
中科院分区：
文献类型：
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作者：
Anirudh Iyengar;Swaroop Ghosh;Srikant Srinivasan
自旋力矩转移随机存取存储器（STTRAM）是一种很有前途的存储技术，由于其低功耗，高速度和鲁棒性。然而，由于温度、热、统计和随机变化，保留时间从几年变为几微秒，这使得保留测试非常耗时。本文分析了工艺变化、温度和干扰电流对数据保持的影响。它提供了一种可测试设计（DFT）解决方案，通过结合弱写测试模式来有效地从其他强位中筛选出弱位，从而减少测试时间。此外，它还提供了老化时技术和老化后技术来测试数据保留。这些技术将保留时间测试压缩到微秒量级。
Spin-torque transfer RAM (STTRAM) is a promising memory technology due to its low power, high speed, and robustness. However, the shift of retention time from a few years to a few microseconds due to temperature, thermal, statistical, and stochastic variations makes retention testing nontrivial and time consuming. This article analyzes the impact of process variation, temperature, and disturb current on data retention. It provides a design-for-test (DFT) solution to reduce the test time by incorporating a weak write test mode to effectively screen the weak bits from other strong bits. Additionally, it presents an at-burn-in technique and an after-burn-in technique to test data retention. These techniques compress the retention time test to the order of microseconds.