Ferroelastic switching for nanoscale non-volatile magnetoelectric devices
Ferroelastic switching for nanoscale non-volatile magnetoelectric devices
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DOI：
10.1038/nmat2703
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发表时间：
2010-04-01
期刊：
影响因子：
41.2
通讯作者：
Eom, C. B.
中科院分区：
文献类型：
--
作者：
Baek, S. H.;Jang, H. W.;Eom, C. B.
多铁性，其中（反）铁磁，铁电和铁弹有序参数共存（1-5），使磁有序的电场通过开关的电极化（6-9）的操纵。已经表明，在单相多铁性材料如BiFeO 3中实现磁电耦合需要铁弹性（71度，109度）而不是铁电（180度）畴变（6）。然而，在单相系统中控制这种铁弹性切换一直是一个重大挑战，因为弹性相互作用往往会使小的切换体积不稳定，导致随后在零电场下的铁弹性反向切换，从而导致非易失性信息存储的消失（10，11）。在我们的相场模拟的指导下，在这里，我们报告了一种方法来稳定铁弹开关消除应力引起的不稳定性负责使用隔离的单畴BiFeO 3岛回开关。这项工作展示了在纳米尺度上控制和使用非易失性磁电耦合的关键一步。除了磁电耦合，它提供了一个框架，探索一条路线，以控制耦合到其他低对称性材料的铁弹序多阶参数。
Multiferroics, where (anti-) ferromagnetic, ferroelectric and ferroelastic order parameters coexist(1-5), enable manipulation of magnetic ordering by an electric field through switching of the electric polarization(6-9). It has been shown that realization of magnetoelectric coupling in a single-phase multiferroic such as BiFeO3 requires ferroelastic (71 degrees, 109 degrees) rather than ferroelectric (180 degrees) domain switching(6). However, the control of such ferroelastic switching in a single-phase system has been a significant challenge as elastic interactions tend to destabilize small switched volumes, resulting in subsequent ferroelastic back-switching at zero electric field, and thus the disappearance of non-volatile information storage(10,11). Guided by our phase-field simulations, here we report an approach to stabilize ferroelastic switching by eliminating the stress-induced instability responsible for back-switching using isolated monodomain BiFeO3 islands. This work demonstrates a critical step to control and use non-volatile magnetoelectric coupling at the nanoscale. Beyond magnetoelectric coupling, it provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic order in other low-symmetry materials.