High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
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DOI：
10.1063/1.3592569
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发表时间：
2011-05
影响因子：
4
通讯作者：
S. Liu;Q. Han;B. Zhu;Xiaohong Yang;H. Ni;Jun He;Xizhang Wang;M. Li;Yimei Zhu;Jinlan Wang;X. Wang;Z. Niu
中科院分区：
文献类型：
--
作者：
S. Liu;Q. Han;B. Zhu;Xiaohong Yang;H. Ni;Jun He;Xizhang Wang;M. Li;Yimei Zhu;Jinlan Wang;X. Wang;Z. Niu
在这篇论文中，我们展示了一个生长在GaAs衬底上的顶部照明1.55 μm变质InGaAs谐振腔增强p-i-n光电探测器。利用固体源分子束外延系统生长光电探测器。高质量的线性梯度InxAl0.4Ga1−x−0.4As变质缓冲层使光电二极管在0 V时达到2.3×10−6 A/cm2的超低暗电流密度，在5 V的反向偏置下达到4.2×10−5 A/cm2。谐振波长1542 nm处量子效率高达84.4%，半宽约14 nm处全宽，- 3 dB带宽高达13 GHz。
In this letter, we demonstrated a top illuminated 1.55 μm metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded InxAl0.4Ga1−x−0.4As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3×10−6 A/cm2 at 0 V and 4.2×10−5 A/cm2 at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a −3 dB bandwidth up to 13 GHz were also obtained.