Air stability of n-channel organic transistors based on nickel coordination compounds
Air stability of n-channel organic transistors based on nickel coordination compounds
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DOI：
10.1016/j.orgel.2007.06.007
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发表时间：
2007-12
影响因子：
3.2
通讯作者：
H. Wada;Tomohiro Taguchi;Bunpei Noda;T. Kambayashi;Takehiko Mori;K. Ishikawa;H. Takezoe
中科院分区：
文献类型：
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作者：
H. Wada;Tomohiro Taguchi;Bunpei Noda;T. Kambayashi;Takehiko Mori;K. Ishikawa;H. Takezoe
制备了一系列四苯基镍二硫醇配合物1，并研究了n沟道有机场效应晶体管（OFET）的空气稳定性。还原电位高于 0V 的氟和三氟甲基衍生物可提供相当空气稳定的 n 沟道 OFET。金属有机电荷转移络合物（TTF）（TCNQ）（TTF：四硫富瓦烯和TCNQ：四氰基醌二甲烷）用作源电极和漏电极，即使在Al电极不工作时也能实现n沟道晶体管特性。
A series of tetraphenyl nickel dithiolene complexes, 1, are prepared, and the air stability of the n-channel organic field-effect transistors (OFET) is investigated. The fluoro and trifluoromethyl derivatives with reduction potentials higher than 0V afford reasonably air-stable n-channel OFET. Metallic organic charge-transfer complex (TTF)(TCNQ) (TTF: tetrathiafulvalene and TCNQ: tetracyanoquinodimethane) is used as source and drain electrodes, and realizes n-channel transistor properties even when Al electrodes do not work.