Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance.
Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance.
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DOI：
10.1039/c3nr00550j
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发表时间：
2013-09
期刊：
影响因子：
6.7
通讯作者：
Z. Yue;I. Levchenko;Shailesh Kumar;D. Seo;Xiaolin Wang;S. Dou;K. Ostrikov
中科院分区：
文献类型：
--
作者：
Z. Yue;I. Levchenko;Shailesh Kumar;D. Seo;Xiaolin Wang;S. Dou;K. Ostrikov
我们报告的磁输运性质的大面积垂直少层石墨烯网络具有不同的形态，在一个强磁场（高达10 T）在很宽的温度范围内测量的比较研究。通过等离子体增强CVD工艺在由硅晶片支撑的薄（500 nm）氧化硅层上生长的花瓣状和树状石墨烯网络在2至200 K的温度范围内表现出电阻-磁场依赖性的显著差异。这种行为解释的电子散射在超长的反应性边缘和超致密的边界的石墨烯nanocalls的效果。我们的研究结果为三维垂直石墨烯基磁电子纳米器件与形态可调的各向异性磁性能铺平了道路。
We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance-magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our results pave a way towards three-dimensional vertical graphene-based magnetoelectronic nanodevices with morphology-tuneable anisotropic magnetic properties.