Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction
Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction
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DOI：
10.1063/1.4789373
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发表时间：
2013-01
影响因子：
4
通讯作者：
A. Yang;Y. Yamashita;M. Kobata;T. Matsushita;H. Yoshikawa;I. Píš;M. Imura;T. Yamaguchi;O. Sakata;Y. Nanishi;Keisuke L. I. Kobayashi
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文献类型：
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作者：
A. Yang;Y. Yamashita;M. Kobata;T. Matsushita;H. Yoshikawa;I. Píš;M. Imura;T. Yamaguchi;O. Sakata;Y. Nanishi;Keisuke L. I. Kobayashi
利用实验室硬X射线光电子衍射（HXPD）技术研究了极性InN薄膜的近表面结构。HXPD图案从In 3d 5/2和N 1 s核心水平的In极性和N极性InN膜是不同的，彼此之间的模拟结果，使用多散射团簇模型进行比较。结果表明，In极性InN薄膜的近表面结构接近于理想的纤锌矿结构。另一方面，在N极性InN膜上，形成了富缺陷表面。此外，在HXPD图案中观察到极性内结构域的存在。
Near-surface structures of polar InN films were investigated by laboratory-based hard X-ray photoelectron diffraction (HXPD) with chemical-state-discrimination. HXPD patterns from In 3d5/2 and N 1s core levels of the In-polar and N-polar InN films were different from each other and compared with the simulation results using a multiple-scattering cluster model. It was found that the near-surface structure of the In-polar InN film was close to the ideal wurtzite structure. On the other hand, on the N-polar InN film, defects-rich surface was formed. In addition, the existence of the In-polar domains was observed in the HXPD patterns.