Control of alkanethiolate monolayer structure using vapor-phase annealing
Control of alkanethiolate monolayer structure using vapor-phase annealing
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DOI：
10.1021/ja035036g
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发表时间：
2003-09-24
影响因子：
15
通讯作者：
Weiss, PS
中科院分区：
文献类型：
--
作者：
Donhauser, ZJ;Price, DW;Weiss, PS
我们描述了一个退火程序的自组装单分子膜（SAMs），使用气相分子修改的局部域结构。现有的自组装膜上的癸硫醇Au{111}退火使用气相十二烷硫醇分子，使原来的和新引入的分子可以区分使用扫描隧道显微镜（STM）。从汽相沉积的分子插入现有的单层缺陷位点和域边界以及衬底台阶边缘，形成离散的网络状域。SAM分子晶格可以跨越癸硫醇盐和十二烷硫醇盐结构域之间的分子平台边界被保留。候选分子电子组分分子作为分离的分子从癸硫醇盐基质中的溶液中插入。然后，这些插入的分子可以被从气相引入的十二硫醇分子包围，从而证明了用于控制插入分子的局部环境的方法。
We describe an annealing procedure for self-assembled monolayers (SAMs) that uses vapor-phase molecules to modify the local domain structure. Existing SAMs of decanethiolate on Au{111} were annealed using vapor-phase dodecanethiol molecules, so that the original and newly introduced molecules could be distinguished using scanning tunneling microscopy (STM). Molecules deposited from the vapor phase inserted at existing monolayer defect sites and domain boundaries, and at substrate step edges forming discrete network-like domains. The SAM molecular lattice can be preserved across molecular terrace boundaries between the decanethiolate and dodecanethiolate domains. Candidate molecular electronic component molecules were inserted from solution in the decanethiolate matrix as isolated molecules. These inserted molecules could then be surrounded by dodecanethiolate molecules introduced from the vapor phase, thus demonstrating a method for controlling the local environment of inserted molecules.