Longitudinal ana transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy
Longitudinal ana transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy
复制标题
使用光致发光光谱法对嵌入直立 InP 纳米线内的单个 InAsP 量子点进行纵向和横向激子自旋弛豫
DOI:
10.1103/physrevb.85.075324
复制
发表时间:
2012
影响因子:
3.7
通讯作者:
笹倉弘理
中科院分区:
文献类型:
--
作者:
J.M. Park;S. Nakashima;M. Sohgawa;T. Kanashima;and M. Okuyama;高地満寿雄,山上紘平,高橋一匡,佐々木徹,菊池崇志,加藤有行;笹倉弘理
We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. Elongation of the transverse exciton-spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well explained by the motional narrowing mechanism induced by Gaussian fluctuations of environmental charges in the nanowire. The longitudinal exciton-spin relaxation time is evaluated by the degree of the random polarization of emission originating from exciton states confined in a single-nanowire quantum dot by using Mueller calculus based on Stokes parameters representation. The reduction in the random polarization component with decreasing excitation power is caused by suppression of the exchange interaction of electron and hole due to an optically induced internal electric field by the dipoles at the wurtzite and zinc-blende heterointerfaces in the InP nanowire.