EQUILIBRIUM SHAPE OF SI
EQUILIBRIUM SHAPE OF SI
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DOI：
10.1103/physrevlett.70.1643
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发表时间：
1993-03-15
影响因子：
8.6
通讯作者：
JACOBSON, DC
中科院分区：
文献类型：
--
作者：
EAGLESHAM, DJ;WHITE, AE;JACOBSON, DC
通过MeV He注入和退火，在Si中形成小空洞。我们测量这些空隙的平衡形状，从而提取Si的表面能曲线γ（θ）。Gamma（111）是全局最小值，其中Gamma（100）几乎等于1.1 Gamma（111），并且表面上的所有其他尖点相对较小。实验伽马（θ）与理论预测和早期的实验进行比较。从dgamma/dtheta得到的阶跃能量在（100）上几乎等于28 +/- 10 meV/atom，在（111）上几乎等于140 +/- 20 meV/atom;这些值与扫描隧道显微镜实验进行了比较。
Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve gamma(theta) for Si. Gamma(111) is the global minimum, with gamma(100) almost-equal-to 1.1 gamma(111) and all other cusps on the surface being relatively small. The experimental gamma(theta) is compared with theoretical predictions and earlier experiments. Step energies obtained from dgamma/dtheta are almost-equal-to 28 +/- 10 meV/atom on (100) and almost-equal-to 140 +/- 20 meV/atom on (111); these values are compared with scanning tunneling microscopy experiments.