Recent advances and challenges for successful p‐type control of InN films with Mg acceptor doping by molecular beam epitaxy
Recent advances and challenges for successful p‐type control of InN films with Mg acceptor doping by molecular beam epitaxy
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DOI：
10.1002/pssa.200983118
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发表时间：
2010-05
期刊：
影响因子：
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通讯作者：
A. Yoshikawa;Xinqiang Wang;Y. Ishitani;A. Uedono
中科院分区：
文献类型：
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作者：
A. Yoshikawa;Xinqiang Wang;Y. Ishitani;A. Uedono
InN仍然是III族氮化物中研究最少的材料，为了更好地理解其材料特性以及器件应用的材料控制，还有几个问题需要克服。特别是，成功的p型掺杂是一个非常重要但在InN中非常困难的问题。在本文中，我们介绍了材料控制方面的最新进展，特别关注通过 MBE 使用 Mg 受体对 InN 薄膜进行 p 型掺杂，展示了成功的 p 型控制和 p 型传导及其电学和光学特性。此外，作为成功p型InN掺杂的先决条件，还讨论了InN在GaN上的外延行为以及螺纹位错对在GaN模板上生长的高纯度未掺杂InN外延层的影响。
InN is still the least studied material among III‐nitrides and there are several problems to be overcome for better understanding of its material properties and also its material control for device application. In particular, successful p‐type doping is a quite important issue but quite difficult in InN. In this article, we present a study on the latest advances in material control paying special attention to the p‐type doping of InN films using Mg‐acceptors by MBE, the demonstration of successful p‐type control and p‐type conduction, and their electrical and optical properties as well. Furthermore, as a prerequisite of successful p‐type doping of InN, epitaxy behaviors of InN on GaN and effects of threading dislocations on high‐purity undoped InN epilayers grown on GaN template are also discussed.