Fermi level tuning of Ag-doped Bi2Se3 topological insulator
Fermi level tuning of Ag-doped Bi2Se3 topological insulator
复制标题
DOI：
10.1038/s41598-019-41906-7
复制
发表时间：
2019-03-29
影响因子：
4.6
通讯作者：
Kubozono, Yoshihiro
中科院分区：
文献类型：
--
作者：
Uesugi, Eri;Uchiyama, Takaki;Kubozono, Yoshihiro
在35K以上，掺银Bi2Se3(AgxBi2-xSe3)的电阻率(Rho)随温度的变化表现出绝缘行为，但在35K以下，Rho突然随温度降低而减小，这与未掺杂的Bi2Se3在1.5-300K时的金属行为相反，这一显著的输运性质从金属行为的变化清楚地表明，掺银Bi2Se3可以有效地下调费米能级。霍尔效应测量表明，在AgxBi2-xSe3中，载流子仍然是电子，电子密度随温度变化，合理解释了输运性质。此外，AgxBi2-xSe3的正栅极提供了与非掺杂Bi2Se3类似的金属行为，这表明费米能级成功地向上调谐。
The temperature dependence of the resistivity (rho) of Ag-doped Bi2Se3 (AgxBi2-xSe3) shows insulating behavior above 35 K, but below 35 K, rho suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi2Se3 at 1.5-300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi2Se3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in AgxBi2-xSe3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of AgxBi2-xSe3 provides metallic behavior that is similar to that of non-doped Bi2Se3, indicating a successful upward tuning of the Fermi level.