Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity
Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity
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DOI：
10.1063/1.1589593
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发表时间：
2003-08-01
影响因子：
3.2
通讯作者：
Harper, JME
中科院分区：
文献类型：
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作者：
Barmak, K;Gungor, A;Harper, JME
研究了II合金元素，即Mg、Ti、In、Sn、Al、Ag、Co、Nb和B，在1和3at. %，以及Ir和W，仅在3at. %时，对铜的电阻率和晶粒结构的影响。将膜电子束蒸发到热氧化的Si晶片上，并且具有在420-560 nm范围内的厚度。纯蒸镀Cu膜用作对照。在400 ℃下进行等温退火5 h;在3 ℃至650 ℃和950 ℃下进行恒定加热速率处理，在该温度下不保持。在所有情况下，退火导致电阻率的降低相比，作为沉积状态。此外，退火到较高的温度导致较低的，退火后，室温电阻率，除非膜团聚或显示出溶质再溶解的证据。退火也导致了显着的增长的晶粒，除了含Nb和W的膜。此外，名义上3at. %，400 ℃退火的膜小于标称1.0 at. %的电影。在这种情况下，令人感兴趣的例外是含Co膜，其具有比纯铜膜更大的晶粒尺寸，并且此外，对于具有更高浓度的Co的膜，其表现出更大的晶粒尺寸。（0.4B）和Cu（1.0Ag）分别在2.0和2.1 μ Ω cm处具有最低的结晶度，并且Cu（2.8Co）在1080 nm处显示出最大的平均晶粒尺寸。相同退火后的纯Cu膜的电阻率和晶粒尺寸分别为2.0 A cm和790 nm。在400 ℃退火的20个合金膜中，有8个观察到第二相的析出。没有合金膜同时表现出低电阻率和比纯铜更大的晶粒尺寸的组合。(C)2003年，美国物理学会。
The impact of I I alloying elements, namely, Mg, Ti, In, Sn, Al, Ag, Co, Nb, and B, at two nominal concentrations of 1 and 3 at. %, and Ir and W, at only a nominal concentration of 3 at. %, on the resistivity and grain structure of copper was investigated. The films were electron beam evaporated onto thermally oxidized Si wafers and had thicknesses in the range of 420-560 nm. Pure evaporated Cu films were used as controls. Isothermal anneals were carried out at 400degreesC for 5 h; constant-heating rate treatments, with no hold at the temperature, were done at 3degreesC to 650 and 950degreesC. In all cases, annealing resulted in the lowering of resistivity compared with the as-deposited state. Furthermore, annealing to a higher temperature resulted in lower, postannealing, room-temperature resistivity, unless the film agglomerated or showed evidence of solute redissolution. Annealing also resulted in significant growth of grains, except for the Nb- and W-containing films. In addition, the grain sizes for the nominally 3 at. %, 400degreesC-annealed films were smaller than those for the nominally 1.0 at. % films. The interesting exceptions in this case were the Co-containing films, which had a larger grain size than the pure Cu film, and which, in addition, exhibited a larger grain size for the film with the higher concentration of Co. After the 400degreesC anneal, Cu(0.4B) and Cu(1.0Ag) had the lowest resistivities at 2.0 and 2.1 muOmega cm, respectively, and Cu(2.8Co) showed the largest average grain size at 1080 nm. The resistivity and grain size for the pure Cu film after the same anneal were 2.0 A cm and 790 nm, respectively. Precipitation of a second phase was observed in 8 of 20 alloy films annealed at 400degreesC. No alloy film simultaneously showed the combination of a low resistivity and a larger grain size than pure Cu. (C) 2003 American Institute of Physics.