Plasma and photon interactions with organosilicon polymers for directed self-assembly patterning applications
Plasma and photon interactions with organosilicon polymers for directed self-assembly patterning applications
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等离子体和光子与有机硅聚合物的相互作用，用于定向自组装图案化应用
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
D. Graves
中科院分区：
文献类型：
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作者：
L. Azarnouche;Stephen M. Sirard;William J. Durand;Gregory Blachut;E. Gurer;D. Hymes;Christopher J. Ellison;C. Willson;D. Graves
含硅嵌段共聚物（bcp）是定向自组装模式应用的有希望的候选者，并且能够访问临界尺寸小于10纳米的结构。需要在块之间进行显着的蚀刻对比度，以集成用于图案应用的bcp并形成初始地形掩模。对于含硅的bcp， O2等离子体暴露可以通过从含硅块形成薄的抗蚀刻氧化硅（SiOx）表面层来提高块之间的蚀刻对比度。作者还发现H2和N2/H2等离子体可以由有机硅聚合物（OSPs）形成耐蚀刻阻挡层。H2等离子体产生的真空紫外（VUV）光子引起的光化学降解引发了该蚀刻势垒层的形成。傅里叶变换红外透射光谱测量表明，由于甲基硅基键（Si- ch3）的断裂和随后的碳深度，高硅含量聚合物的紫外诱导降解增强。
Silicon (Si)-containing block copolymers (BCPs) are promising candidates for directed self-assembly patterning applications and are able to access structures with critical dimensions less than 10 nm. Significant etch contrast between the blocks is required to integrate BCPs for patterning applications and form an initial topographical mask. For Si-containing BCPs, O2 plasma exposure can give high etch contrast between the blocks by forming a thin etch resistant silicon oxide (SiOx) surface layer from the Si-containing block. The authors have also found that H2 and N2/H2 plasmas can form etch resistant barrier layers from organosilicon polymers (OSPs). Photodegradation of the OSPs induced by H2 plasma-generated vacuum ultraviolet (VUV) photons initiates the formation of this etch barrier layer. Fourier transform infrared transmission spectroscopy measurements show enhanced VUV-induced degradation in polymers with higher Si content due to cleavage of the methylsilyl bonds (Si-CH3) and subsequent carbon depl...