Evolution from isoelectronic impurities to an alloy in nitrogen delta-doped AlAs grown by molecular beam epitaxy

Evolution from isoelectronic impurities to an alloy in nitrogen delta-doped AlAs grown by molecular beam epitaxy
复制标题

分子束外延生长的氮δ掺杂AlAs从等电子杂质到合金的演变

DOI:
--
复制
发表时间:
2012
期刊:
影响因子:
--
通讯作者:
and K. Sakoda
and K. Sakoda
中科院分区:
--
文献类型:
--
作者:
M. Jo;T. Mano;Y. Sakuma;and K. Sakoda

文献摘要

相似文献