Evolution from isoelectronic impurities to an alloy in nitrogen delta-doped AlAs grown by molecular beam epitaxy
Evolution from isoelectronic impurities to an alloy in nitrogen delta-doped AlAs grown by molecular beam epitaxy
复制标题
分子束外延生长的氮δ掺杂AlAs从等电子杂质到合金的演变
DOI:
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发表时间:
2012
期刊:
影响因子:
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通讯作者:
and K. Sakoda
中科院分区:
文献类型:
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作者:
M. Jo;T. Mano;Y. Sakuma;and K. Sakoda