Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator
Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator
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DOI：
10.1063/1.2213969
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发表时间：
2006-06-19
影响因子：
4
通讯作者：
Park, Byung-Gook
中科院分区：
文献类型：
--
作者：
Lee, Cheon An;Park, Dong Wook;Park, Byung-Gook
研究了以聚乙烯醇(PVA)为绝缘体的底接触并五苯有机薄膜晶体管(OTFT)中磁滞现象的产生原因。根据不同扫描范围和两个不同扫描方向的电学测量，推测滞后效应是由可能从栅极注入并捕获在PVA块中的电子或空穴引起的，而不是由极化或内部存在的可移动离子引起的。在栅极和PVA绝缘层之间设置阻挡氧化层的OTFTs的磁滞明显减小，证实了这一假设。(C)2006年美国物理研究所。
The origin of the hysteresis phenomenon in bottom-contact pentacene organic thin-film transistors (OTFTs) with cross-linked poly(vinyl alcohol) (PVA) insulator is studied. From electrical measurements with various sweep ranges and two different sweep directions, the hysteresis effect is presumed to be caused by the electrons or holes that could be injected from the gate and trapped in the PVA bulk, rather than by the polarization or internally existing mobile ions. The assumption is confirmed by the clear reduction of hysteresis in OTFTs with a blocking oxide layer between gate and PVA insulator. (c) 2006 American Institute of Physics.