Tunnel field-effect transistor without gate-drain overlap
Tunnel field-effect transistor without gate-drain overlap
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DOI：
10.1063/1.2757593
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发表时间：
2007-07
影响因子：
4
通讯作者：
A. Verhulst;W. Vandenberghe;K. Maex;G. Groeseneken
中科院分区：
文献类型：
--
作者：
A. Verhulst;W. Vandenberghe;K. Maex;G. Groeseneken
隧道场效应晶体管由于没有短通道效应和亚阈值斜率限制而成为金属氧化物半导体场效应晶体管的有前途的继任者。然而，隧道器件是双极性的，并且根据器件材料的特性，它们可能具有低导通电流，从而导致低开关速度。作者通过允许更短的栅极结构推广了隧道场效应晶体管的结构。该器件对于垂直纳米线晶体管尤其具有吸引力。器件仿真表明，作者更灵活的配置允许减少双极性行为，增加切换速度，降低处理复杂性。
Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect transistors because of the absence of short-channel effects and of a subthreshold-slope limit. However, the tunnel devices are ambipolar and, depending on device material properties, they may have low on-currents resulting in low switching speed. The authors have generalized the tunnel field-effect transistor configuration by allowing a shorter gate structure. The proposed device is especially attractive for vertical nanowire-based transistors. As illustrated with device simulations, the authors’ more flexible configuration allows of the reduction of ambipolar behavior, the increase of switching speed, and the decrease of processing complexity.