Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
复制标题
溅射非晶硅薄膜准分子激光晶化工艺温度100℃制备大晶硅颗粒
DOI：
10.1143/jjap.46.1245
复制
发表时间：
2007
影响因子：
1.5
通讯作者：
K. Beenakker
中科院分区：
文献类型：
--
作者：
M. He;R. Ishihara;Ellen J. J. Neihof;Y. Andel;H. Schellevis;W. Metselaar;K. Beenakker
采用准分子激光晶化（ELC）技术，在最高工艺温度100 °C条件下，成功制备了直径为1.8 μm的大尺寸多晶硅（poly-Si）晶粒。采用脉冲直流磁控溅射法在非结构化氧化片上沉积α-Si。结果表明，即使在低于超横向生长（SLG）区的能量密度下，偏压沉积的α-Si薄膜也容易在ELC过程中烧蚀。然而，在没有偏压的情况下沉积的α-Si膜可以承受远超过SLG区域的能量密度而不烧蚀。这种高压应力的零偏压溅射α-Si膜具有低Ar含量和高密度，有利于抑制烧蚀。在较宽的能量密度窗口内可以获得花瓣状的大晶粒，这可能是由于α-Si基体中存在一些细小的微晶。这些具有低工艺温度的大晶粒有希望直接形成系统电路以及在塑料箔上的高质量显示器。
Large polycrystalline silicon (poly-Si) grains with a diameter of 1.8 µm are successfully prepared by excimer laser crystallization (ELC) of a sputtered amorphous silicon (α-Si) film at a maximum process temperature of 100 °C. By pulsed DC magnetron sputtering, α-Si is deposited on a non-structured oxidized wafer. It is found that the α-Si film deposited with a bias is easily ablated during ELC, even at an energy density below the super lateral growth (SLG) region. However, the α-Si film deposited without a bias can endure an energy density well beyond the SLG region without ablation. This zero-bias sputtered α-Si film with a high compressive stress has a low Ar content and a high density, which is beneficial for the suppression of ablation. Large grains with a petal-like shape can be obtained in a wide energy density window, which can be a result from some fine crystallites in the α-Si matrix. These large grains with a low process temperature are promising for the direct formation of system circuits as well as a high-quality display on a plastic foil.