Laser-reactive ablation deposition of silicon-nitride films
Laser-reactive ablation deposition of silicon-nitride films
复制标题
氮化硅薄膜的激光反应烧蚀沉积
DOI：
10.1007/bf01538403
复制
发表时间：
1995
期刊：
影响因子：
--
通讯作者：
I. Mihăilescu
中科院分区：
文献类型：
--
作者：
M. D. Giorgi;G. Leggieri;A. Luches;M. Martino;A. Perrone;G. Majni;P. Mengucci;J. Zemek;I. Mihăilescu
在低压（0.05-5毫巴）氨气氛中，通过XeCl（308 nm）准分子激光烧蚀硅在硅沃茨上沉积氮化硅膜。将重复频率为8 Hz的10 000个脉冲系列导向靶表面。能量密度设定为约5 J/cm 2。脉冲持续时间约为30 ns。沉积的薄膜，其特征在于通过不同的技术（X射线衍射，X射线光电子能谱，俄歇电子能谱，卢瑟福背散射光谱，扫描电子显微镜，轮廓）。在特定的实验条件下获得了厚度接近1 μm的氮化硅薄膜。
Silicon-nitride films were deposited on silicon waters by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05–5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 μm were obtained under specific experimental conditions.