The EFG process applied to the growth of silicon ribbons*
The EFG process applied to the growth of silicon ribbons*
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应用于硅带生长的 EFG 工艺*
DOI：
10.1007/bf02655405
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发表时间：
1975
影响因子：
2.1
通讯作者：
B. Chalmerst
中科院分区：
文献类型：
--
作者：
J. C. Swartz;T. Surek;B. Chalmerst
硅带的边缘定义、薄膜生长（EFG）技术的发展促进了对合适的模具材料、模具形状、半月板形状和热梯度的分析。对带的高电子质量的要求，结合EFG预期的高有效溶质分布系数，将模具材料的选择范围缩小到石墨和熔融二氧化硅。计算了晶体与模具之间的半月板形状。这种形状与接触角信息一起用于确定石墨和硅模具的设计标准。晶体生长对生长界面前温度梯度的影响用条带厚度和表征生长装置辐射环境的经验参数进行了计算。迄今为止，已经从碳模和硅模中生长出了许多25毫米宽× 0.3毫米厚的带状材料。对带材质量进行了讨论。
The development of edge-defined, film-fed growth (EFG) techniques for silicon ribbons has prompted analyses of appropriate die materials, die shapes, meniscus shapes and thermal gradients. The requirement for high electronic quality of the ribbons, in conjunction with the high effective solute distribution coefficients expected for EFG, narrows the choice of die materials primarily to graphite and fused silica. The shape of the meniscus between crystal and die has been calculated. This shape, together with contact angle information, is used to determine design criteria for both graphite and silica dies. The effect of crystal growth on the temperature gradient ahead of the growth interface has been calculated in terms of the ribbon thickness and an empirical parameter characterizing the radiating environment of the growth apparatus. Numerous 25 mm wide × 0.3 mm thick ribbons from carbon dies and a few small ribbons from silica dies have so far been grown. The ribbon quality is discussed.