Isolation effect in ferromagnetic-metal/semiconductor hybrid optical waveguide
Isolation effect in ferromagnetic-metal/semiconductor hybrid optical waveguide
复制标题
铁磁金属/半导体混合光波导中的隔离效应
DOI：
10.1063/1.1953878
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发表时间：
2005
影响因子：
4
通讯作者：
K. Ando
中科院分区：
文献类型：
--
作者：
V. Zayets;K. Ando
实验研究了铁磁-金属/半导体混合光波导中的隔离效应。发现Co覆盖的Ga1−xAlxAs波导中的光传输依赖于Co的磁化强度。具有SiO2缓冲层的波导与在波导芯层和Co层之间使用Ga1−xAlxAs缓冲层的波导的隔离方向不同。澄清了该隔离器结构中隔离的物理根源。实验研究了铁磁-金属/半导体混合光波导中的隔离效应。发现Co覆盖的Ga1−xAlxAs波导中的光传输依赖于Co的磁化强度。具有SiO2缓冲层的波导与在波导芯层和Co层之间使用Ga1−xAlxAs缓冲层的波导的隔离方向不同。澄清了该隔离器结构中隔离的物理根源。
The isolation effect in a ferromagnetic-metal/semiconductor hybrid optical waveguide was experimentally studied. Optical transmission in a Ga1−xAlxAs waveguide covered by Co was found to depend on the magnetization of the Co. The isolation direction was different for a waveguide with a SiO2 buffer layer and for a waveguide with a Ga1−xAlxAs buffer layer used between the waveguide core layer and Co layer. The physical origin of the isolation in this isolator structure was clarified.The isolation effect in a ferromagnetic-metal/semiconductor hybrid optical waveguide was experimentally studied. Optical transmission in a Ga1−xAlxAs waveguide covered by Co was found to depend on the magnetization of the Co. The isolation direction was different for a waveguide with a SiO2 buffer layer and for a waveguide with a Ga1−xAlxAs buffer layer used between the waveguide core layer and Co layer. The physical origin of the isolation in this isolator structure was clarified.
首次演示可集成光隔离器的 InGaAsP/InP 有源波导中的 TE 模式不可逆传播
DOI：
--
发表时间：
2004
期刊：
Japanese Journal of Applied Physics, (Express Letter) vol.43, no.12A, pt.2
影响因子：
--
作者：
Hiromasa Shimizu;Yoshiaki Nakano
通讯作者：
Yoshiaki Nakano
利用具有MnAs纳米团簇的磁光波导中的不可逆损耗/增益设计半导体波导型光隔离器
DOI：
--
发表时间：
2002
期刊：
Appl.Phys.Lett. 81
影响因子：
--
作者：
H.Shimizu;M.Tanaka
通讯作者：
M.Tanaka