Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE
Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE
复制标题
DOI：
10.1016/s0022-0248(01)00641-8
复制
发表时间：
2001-07-01
影响因子：
1.8
通讯作者：
Pessa, M
中科院分区：
文献类型：
--
作者：
Li, W;Laaksonen, S;Pessa, M
本文研究了用固体源和气体源分子束外延（MBE）直接在（0 0 1）Ge衬底上生长GaAs的方法。结果发现，控制As-2的初始曝光和清洁的Ge表面是至关重要的，以实现反相无畴生长的GaAs在Ge上。在优化的生长条件下，获得了器件质量的GaAs薄膜，在其中显着减少跨GaAs/Ge界面的互扩散实现。(C)2001 Elsevier Science B. V.保留所有权利。
A detailed study of GaAs frown directly on offcut (0 0 1) Ge substrates by both solid-source and gas-source molecular beam epitaxy (MBE) has been conducted. It was found that control of As-2 initial exposure and a clean Ge surface were crucial to achieve anti-phase domain-free growth of GaAs on Ge. Under optimized growth conditions device-quality GaAs film was obtained, in which significantly reduced interdiffusion across the GaAs/Ge interface was achieved. (C) 2001 Elsevier Science B.V. All rights reserved.