A built-in BTI monitor for long-term data collection in IBM microprocessors
A built-in BTI monitor for long-term data collection in IBM microprocessors
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IBM 微处理器中用于长期数据收集的内置 BTI 监视器
DOI：
10.1109/irps.2013.6532003
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
K. Jenkins
中科院分区：
文献类型：
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作者：
Pong;K. Jenkins
介绍了一种用于长期测量偏置温度不稳定性（BTI）退化的电路。它是一个完全片内测量电路，通过数字输出定期报告测量结果。它在IBM的z196 Enterprise系统上实现，可用于监控实际使用条件下的长期退化。超过500天的客户系统的环形振荡器退化数据的价值。使用一个参考振荡器，以测量在现场，其中电源电压和温度可以动态变化的性能退化的重要性，示出。
A circuit for long-term measurement of bias temperature instability (BTI) degradation is described. It is an entirely on-chip measurement circuit, which reports measurements periodically with a digital output. Implemented on IBM's z196 Enterprise systems, it can be used to monitor long-term degradation under real-use conditions. Over 500 days worth of ring oscillator degradation data from customer systems are presented. The importance of using a reference oscillator to measure performance degradation in the field, where the supply voltage and temperature can vary dynamically, is shown.