Current‐Induced Planar Resistive Switching Mediated by Oxygen Migration in NiO/Pt Bilayer
Current‐Induced Planar Resistive Switching Mediated by Oxygen Migration in NiO/Pt Bilayer
复制标题
NiO/Pt 双层中氧迁移介导的电流感应平面电阻开关
DOI：
10.1002/aelm.202000584
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发表时间：
2020
影响因子：
6.2
通讯作者：
Xuepeng Qiu
中科院分区：
文献类型：
--
作者：
Shuai Hu;Huanglin Yang;Meng Tang;Huanjian Chen;Yumeng Yang;Shiming Zhou;Xuepeng Qiu
为了推动信息技术的发展，人们迫切需要新的材料和机制来保持电可调的阻态。在本研究中，我们发现了一种由氧迁移介导的电流感生平面电阻开关的新场景。在不同晶态的NiO中成功地实现了锯齿状开关，开关幅度随铂厚度的增加而单调增加。另一方面，发现临界开关电流与衬底的热导率有很强的相关性，因此提出了一个热源。通过电子能量损失谱直接探测Ni2+和O2−在开关前后的分布，可以确定NiO/PT中的开关行为与O2−的平面再分布有关，从而阐明了开关过程背后的氧迁移情景。在这种情况下，将平面电阻开关扩展到了SrTiO_3/铂、GdO_x/铂和Tbox/铂，并通过控制GdO_x/铂和Tbox/铂双层膜中的氧含量成功地实现了对开关特性的控制。这一结果为利用氧介导的平面电阻开关设计新的紧急存储器件提供了新的策略。
New materials and mechanisms to retain electrically tunable resistance states are highly pursed to advance information technology. In this study, a novel scenario of current‐induced planar resistive switching mediated by oxygen migration is unveiled in the NiO/Pt bilayers. Sawtooth‐like switching is successfully realized in various crystalline NiO, and the switching amplitude monotonically increases with the Pt thickness. On the other hand, the critical switching current is found to be strongly correlated with the substrate thermal conductivity hence suggesting a thermal origin. By directly probing the Ni2+and O2−distribution before and after switching via electron energy loss spectrum, the switching behavior in NiO/Pt is assuredly associated with the planar redistribution of O2−, thereby setting forth an oxygen migration scenario underlying the switching process. Under this scenario, the planar resistive switching is extended to the SrTiO3/Pt, GdOx/Pt, and TbOx/Pt, and the manipulation of the switching characteristics is successfully achieved by controlling the oxygen content in the GdOx/Pt and TbOx/Pt bilayers. The results offer novel strategy to design new emergent memory devices through oxygen mediated planar resistive switching.