In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor
In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor
复制标题
基于单个多值一晶体管一电阻忆阻器的内存数字比较器
DOI：
10.1109/ted.2020.2967401
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发表时间：
2020-03-01
影响因子：
3.1
通讯作者：
Miao, Xiangshui
中科院分区：
文献类型：
--
作者：
Cheng, Long;Zheng, Hao-Xuan;Miao, Xiangshui
基于多值忆阻器件的内存计算为构建资源少、性能高的计算系统开辟了前景。在这篇文章中，我们在成熟的单管单阻（1T1R）忆阻器中实现了三种可区分的电阻状态。此外，基于单个多值1T1R器件，我们首次成功地展示了一种面积有效的存储器内数字比较器，该比较器在互补金属氧化物半导体（CMOS）方法中将花费5个逻辑门。该方法也很容易扩展到多位。我们的工作可能是一个代表性的使用多值非易失性存储器设备在数字信息处理，以提高性能。
In-memory computing based on multivalued memristive device opens the vision of building computing system with less resource and high performance. In this article, we achieved three distinguishable resistance states in mature one-transistor-one-resistor (1T1R) memristor. Furthermore, based on a single multivalued 1T1R device, for the first time, we successfully demonstrated an area-efficient in-memory digital comparator, which will cost five logic gates in complementary metal oxide semiconductor (CMOS) approach. The method is also easily expanded to multibit. Our work could be a representative of using multivalued nonvolatile memory device in digital information processing with improved performance.