Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe
Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe
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基于 CdTe 和 CdZnTe 的像素和条形探测器开发的技术方面
DOI：
10.1109/nssmic.2000.949053
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
K. Valpas
中科院分区：
文献类型：
--
作者：
V. Gostilo;V. Ivanov;S. Kostenko;I. Lisjutin;A. Loupilov;S. Nenonen;H. Sipila;K. Valpas
介绍了CdZnTe和CdTe晶体加工技术、光刻技术、触点焊片制造技术及其线接技术的发展情况。采用先进的技术制备了不同类型的像素和条形多探测器阵列。演示了它们的拓扑结构和获得的性能。给出了光谱。在室温下，在检测器偏置为500v时，在10- 50pa的实际导通状态下，提供分离像素的先进技术。在10 V电压下，50 ~ 100 mm间隙发育结构的像素间电阻率为40 ~ 300 GOhm。在最佳温度下，我们分别在能量59.6 keV和5.9 keV下获得了2-3%和14-15%的分辨率。
Results on development of technologies for CdZnTe and CdTe crystal processing, photolithography, contact pad manufacture and their wirebonding are presented. Developed technologies were used for fabrication of different types of pixel and strip multidetector arrays. Their topologies and obtained performances are demonstrated. Spectra are presented. Developed technologies provided at room temperature for separate pixels in real switched-on state leakage currents 10-50 pA at a detector bias of 500 V. Interpixel resistivity on developed structures with a gap 50-100 mm was 40-300 GOhm at a voltage 10 V. At optimal temperatures we have obtained a resolution of 2-3% and 14-15% at energies 59.6 and 5.9 keV respectively.