T.Kurabayashi, H.Kikuchi, T.Hamano, J.Nishizawa: "Doping Method for GaAs Molecular Layer Epitaxy by Adsorption Control of Impurity Precursor"J.Crystal Growth. 229. 147-151 (2001)
T.Kurabayashi, H.Kikuchi, T.Hamano, J.Nishizawa: "Doping Method for GaAs Molecular Layer Epitaxy by Adsorption Control of Impurity Precursor"J.Crystal Growth. 229. 147-151 (2001)
复制标题
T.Kurabayashi、H.Kikuchi、T.Hamano、J.Nishizawa:“通过杂质前体的吸附控制实现 GaAs 分子层外延的掺杂方法”J.晶体生长。
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: