Scanning tunneling microscopy/spectroscopy studies of resistive switching in Nb-doped SrTiO3
Scanning tunneling microscopy/spectroscopy studies of resistive switching in Nb-doped SrTiO3
复制标题
Nb 掺杂 SrTiO3 电阻开关的扫描隧道显微镜/光谱研究
DOI：
10.1063/1.4733999
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发表时间：
2012-07-15
影响因子：
3.2
通讯作者：
Nie, J. C.
中科院分区：
文献类型：
--
作者：
Chen, Y. L.;Wang, J.;Nie, J. C.
利用扫描隧道显微镜和光谱（STM/S）研究了Nb掺杂SrTiO 3（STON）的阻变效应。研究发现，通过在STM针尖上施加适当的偏压，可以在STON表面实现RS效应，并且RS阻挡可以控制在纳米尺度。根据STM方法可以排除电极接触对RS过程的影响。更重要的是，结合扫描隧道能谱和X射线光电子能谱的研究表明，氧的迁移是RS过程中电子结构变化的主要机制，这可以解释RS的起源。这些结果有助于人们对遥感的理解和应用。
Scanning tunneling microscopy and spectroscopy (STM/S) was utilized to study the resistive switching (RS) effect in Nb-doped SrTiO3 (STON). It was found that the RS effect could be realized on the STON surface by applying an appropriate bias on the STM tip, and the RS block could be controlled at nanometer scale. The electrode contact effect on the RS process could be excluded according to the STM method. More importantly, the investigation of scanning tunneling spectroscopy combined with the measurement of x-ray photoelectron spectroscopy demonstrated that the oxygen migration should be the dominant mechanism for the variation of electronic structure during the RS process, which can explain the origin of RS in this oxide. These results can be helpful for both the understanding of RS and its applications.