Ballistic hot-electron transport in nanoscale semiconductor heterostructures: exact self-energy of a three-dimensional periodic tight-binding Hamiltonian
Ballistic hot-electron transport in nanoscale semiconductor heterostructures: exact self-energy of a three-dimensional periodic tight-binding Hamiltonian
复制标题
纳米级半导体异质结构中的弹道热电子传输：三维周期性紧束缚哈密顿量的精确自能
DOI：
10.1103/physrevb.69.165301
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发表时间：
2004
影响因子：
3.7
通讯作者：
V. Narayanamurti
中科院分区：
文献类型：
--
作者：
I. Appelbaum;Tairan Wang;J. Joannopoulos;V. Narayanamurti
当半导体异质结构的长度尺度接近晶格常数时，我们目前计算弹道热电子输运的理论就变得不适用了。在这种情况下，应该使用格林函数形式化等方法，从精确的周期性晶格势计算弹道电子传输函数。我们提出了一种直接计算三维周期引线的精确表面格林函数的方法，这是这种格式所必需的。除了在晶体高度对称的情况下，该方法受到求解非对称矩阵Riccati方程困难的限制。
As the length scale for semiconductor heterostructures approaches the regime of the lattice constant, our current theory for calculating ballistic hot-electron transport becomes inapplicable. In this case, a method such as the Green's function formalism should be used to calculate ballistic electron transmission functions from the exact, periodic lattice potential. We present a method for directly calculating the exact surface Green's function for three-dimensional periodic leads which is necessary for such a scheme. Except in cases of high crystal symmetry, the method is limited by the difficulty to solve a nonsymmetric matrix Riccati equation.