Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application
Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application
复制标题
GaAs 的选择性 MLE 生长和表面处理，实现理想的静电感应晶体管 (ISIT) 应用
DOI：
10.1016/0169-4332(94)90193-7
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发表时间：
1994
影响因子：
6.7
通讯作者：
J. Nishizawa
中科院分区：
文献类型：
--
作者：
Y. Oyama;P. Płotka;J. Nishizawa
本文报道了低温表面处理对光激分子层外延制备的砷化镓再生长界面质量的影响。研究了再生二极管特性作为处理温度、暴露 AsH3 压力和持续时间的函数。与∽ 600°C 的传统高温处理相比，即使在∽ 480°C 的低温下，优化的表面处理也能提供良好的再生长界面。结合X射线光电子能谱(XPS)和四极杆质量分析(QMS)的结果讨论了表面处理机理。低温表面处理成功应用于沟道长度为 1800-100 Å、具有几个单层 p+势垒层厚度的 ISIT 制造，其直流跨导 gmas 高达 1500 mS/mm，且具有良好的再现性。
This paper reports the effects of low temperature surface treatment on the GaAs regrown interface quality prepared by photo-stimulated molecular layer epitaxy. The regrown diode characteristics are investigated as functions of treatment temperature, exposing AsH3pressure and duration. Optimized surface treatment gives a good regrown interface even at low temperatures of ∽ 480°C compared with conventional high temperature treatment at ∽ 600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photo-emission spectroscopy (XPS) and quadrupole mass analysis (QMS). Low temperature surface treatment is successfully applied to the ISIT fabrication with a channel length of 1800-100 Å having a few monolayer p+barrier layer thickness, which shows the DC transconductancegmas high as 1500 mS/mm with good reproducibility.