Removal of impurities from metallurgical grade silicon by electron beam melting
Removal of impurities from metallurgical grade silicon by electron beam melting
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电子束熔炼去除冶金级硅中的杂质
DOI：
10.1088/1674-4926/32/3/033003
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发表时间：
2011-03
影响因子：
5.1
通讯作者：
李廷举
中科院分区：
文献类型：
--
作者：
李廷举
太阳能电池目前由各种硅基材料制成。目前，用于太阳能电池的硅材料主要是电子级硅废料（EG-Si）。但在目前的市场上，很难保证这种材料的稳定供应。因此，需要替代生产工艺来增加原料。本文采用电子束熔炼法提纯硅。使用初始纯度为99.88质量%的浸出后的MG-Si颗粒作为起始材料。EBM后获得的硅盘的最终纯度大于99.995质量%。该结果表明EBM可以有效地从硅中去除杂质。本文主要研究了电子束轰击后硅片中杂质的分布。
Solar cells are currently fabricated from a variety of silicon-based materials. Now the major silicon material for solar cells is the scrap of electronic grade silicon (EG-Si). But in the current market it is difficult to secure a steady supply of this material. Therefore, alternative production processes are needed to increase the feedstock. In this paper, EBM is used to purify silicon. MG-Si particles after leaching with an initial purity of 99.88% in mass as starting materials were used. The final purity of the silicon disk obtained after EBM was above 99.995% in mass. This result demonstrates that EBM can effectively remove impurities from silicon. This paper mainly studies the impurity distribution in the silicon disk after EBM.
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DOI：
10.1016/j.msea.2004.08.036
发表时间：
2005-01
影响因子：
6.4
作者：
D. Maijer;T. Ikeda;S. Cockcroft;M. Maeda;R. Rogge
通讯作者：
D. Maijer;T. Ikeda;S. Cockcroft;M. Maeda;R. Rogge
影响因子：
6.3
作者：
J.C.S. Pires;J. Otubo;A.F.B. Braga;P. Mei
通讯作者：
J.C.S. Pires;J. Otubo;A.F.B. Braga;P. Mei
影响因子：
1.2
作者：
Kazuhiro Hanazawa;Noriyoshi Yuge;Y. Kato
通讯作者：
Kazuhiro Hanazawa;Noriyoshi Yuge;Y. Kato
影响因子：
0.9
作者：
V. Osokin;P. A. Shpak;V. V. Ishchenko-V.;V. A. Panibratskii;E. L. Piyuk
通讯作者：
V. Osokin;P. A. Shpak;V. V. Ishchenko-V.;V. A. Panibratskii;E. L. Piyuk
影响因子：
6.7
作者：
Yuge, N;Abe, M;Aratani, F
通讯作者：
Aratani, F