Laser Annealing of Amorphous Germanium on Silicon–Germanium Source/Drain for Strain and Performance Enhancement in pMOSFETs
Laser Annealing of Amorphous Germanium on Silicon–Germanium Source/Drain for Strain and Performance Enhancement in pMOSFETs
复制标题
硅-锗源极/漏极上的非晶锗激光退火可增强 pMOSFET 的应变和性能
DOI：
10.1109/led.2008.2001029
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发表时间：
2008
影响因子：
4.9
通讯作者：
Y. Yeo
中科院分区：
文献类型：
--
作者：
Fangyue Liu;Hoong;K. Ang;M. Zhu;Xincai Wang;D. Lai;P. Lim;Y. Yeo
我们报告的第一个演示的一种新的锗富集过程中形成的硅锗（SiGe）源/漏（S/D）的应力与高Ge含量。该工艺涉及激光诱导局部熔化以及Ge层与底层Si0.8Ge0.2 S/D区域的混合，从而产生渐变的SiGe S/D应力源，峰值Ge含量显着增加。不同的激光能量密度进行了研究的激光退火过程。然后，该工艺成功地集成在器件制造流程中，形成在SiGe S/D中具有高Ge含量的应变绝缘体上硅p沟道场效应晶体管（p-FET）。与具有Si 0.8Ge 0.2 S/D p-FET的应变p-FET相比，使用该工艺实现了约12%的驱动电流增强。的I Dsat增强，主要归因于应变引起的迁移率的改善，被发现增加与减少栅极长度。
We report the first demonstration of a novel germanium-enrichment process for forming a silicon-germanium (SiGe) source/drain (S/D) stressor with a high Ge content. The process involves laser-induced local melting and intermixing of a Ge layer with an underlying Si0.8Ge0.2 S/D region, leading to a graded SiGe S/D stressor with a significant increase in the peak Ge content. Various laser fluences were investigated for the laser annealing process. The process is then successfully integrated in a device fabrication flow, forming strained silicon-on-insulator p-channel field-effect transistors (p-FETs) with a high Ge content in SiGe S/D. A drive current enhancement of ~ 12% was achieved with this process, as compared to a strained p-FET with Si0.8Ge0.2 S/D p-FETs. The I Dsat enhancement, primarily attributed to strain-induced mobility improvement, is found to increase with decreasing gate lengths.