Temperature dependence of ferroelectric property and leakage mechanism in Mn-doped Pb(Zr0.3Ti0.7)O3 films
Temperature dependence of ferroelectric property and leakage mechanism in Mn-doped Pb(Zr0.3Ti0.7)O3 films
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DOI：
10.1016/j.ceramint.2021.05.114
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发表时间：
2021-05
影响因子：
5.2
通讯作者：
Wenping Geng;Xiaojun Qiao;Caiqin Zhao;Dongwan Zheng;Yaqing Li;Le Zhang;Kaixi Bi;Yun Yang;Yao Sun;Xiujian Chou
中科院分区：
文献类型：
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作者：
Wenping Geng;Xiaojun Qiao;Caiqin Zhao;Dongwan Zheng;Yaqing Li;Le Zhang;Kaixi Bi;Yun Yang;Yao Sun;Xiujian Chou
采用溶胶-凝胶法制备了Mn掺杂的Pb（Zr 0. 3 Ti 0. 7）O3（PMZT）铁电薄膜，并采用上电极/铁电薄膜/下电极电容异质结构，研究了PMZT铁电薄膜的铁电、介电和漏电流特性（J-E）随温度的变化关系。掺杂3%Mn时，极化和介电性能明显增强。这种增强有利于这些薄膜在铁电随机存储器中的应用。此外，漏电流分析表明，Mn掺杂量为3%时，漏电流密度随温度的升高而逐渐增大，这可能是由于畴壁和氧空位的移动所致。主要的漏电流传导机制是在宽温度范围内的体限制欧姆或界面限制肖特基发射传导。研究结果对进一步研究具有更好铁电和介电性能的铁电电子器件具有重要意义。
High-quality ferroelectric films of Mn-doped Pb(Zr0.3Ti0.7)O3(PMZT) were prepared using the sol-gel method, and the temperature dependence of ferroelectric, dielectric, and leakage current properties (J–E) were explored in detail using the top electrode/ferroelectric films/bottom electrode capacitor heterostructure. The enhancement of polarization and dielectric properties by element doping is clearly observed by 3% Mn-doping. Such enhancement is beneficial for the application of these films in ferroelectric random-access memory. In addition, the analysis of leakage current reveals symmetric behavior with 3% Mn-doping and the leakage current density gradually increases with increasing temperature, which may be due to the movement of domain wall and oxygen vacancy. The dominant leakage current conduction mechanism is bulk-limited ohmic or interface-limited Schottky emission conduction within a wide temperature range. The results might be meaningful for further work on ferroelectric electrical devices with improved ferroelectric and dielectric properties.