Substrate-induced strain effects on the transport properties of pulsed laser-deposited Nb-doped SrTiO3 films
Substrate-induced strain effects on the transport properties of pulsed laser-deposited Nb-doped SrTiO3 films
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DOI：
10.1063/1.2187439
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发表时间：
2006-03
影响因子：
4
通讯作者：
W. Ramadan;S. Ogale;S. Dhar;Shixiong Zhang;D. Kundaliya;I. Satoh;T. Venkatesan
中科院分区：
文献类型：
--
作者：
W. Ramadan;S. Ogale;S. Dhar;Shixiong Zhang;D. Kundaliya;I. Satoh;T. Venkatesan
通过脉冲激光沉积（PLD）在LaAlO3 （LAO,001）、MgAl2O4 （MAO,001）、SrTiO3 （STO,001）和y稳定ZrO2 （YSZ,001）衬底上生长nb掺杂SrTiO3 （NSTO）薄膜。研究了生长过程中薄膜-衬底晶格失配、薄膜厚度和衬底温度对薄膜性能的影响。NSTO薄膜中的电输运表现出对应变的强烈敏感性，这可能是由于载流子迁移率依赖于键扭曲/拉伸和声子模式的相关变化。
Thin films of Nb-doped SrTiO3 (NSTO) are grown via pulsed laser deposition (PLD) on LaAlO3 (LAO,001), MgAl2O4 (MAO,001), SrTiO3 (STO,001), and Y-stabilized ZrO2 (YSZ,001) substrates. The effects of the film-substrate lattice mismatch, film thickness, and substrate temperature during growth on the film properties are investigated. The electrical transport in NSTO films is shown to exhibit a strong sensitivity to strain, which is suggested to arise from the dependence of carrier mobility on bond distortions/stretching and related changes in phonon modes.