Dynamic oxidation of SiC with arc-heated plasma wind tunnel and laser heating
Dynamic oxidation of SiC with arc-heated plasma wind tunnel and laser heating
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DOI：
10.1016/j.vacuum.2020.109899
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发表时间：
2021-03-01
期刊：
影响因子：
4
通讯作者：
Komurasaki, Kimiya
中科院分区：
文献类型：
--
作者：
Momozawa, Ai;Yokote, Norihiro;Komurasaki, Kimiya
为研究再入飞行器的热防护系统（TPS），建立了电弧加热等离子体风洞，模拟再入飞行器的再入环境。通过安装激光加热系统，样品的表面温度独立于等离子体流来控制。利用该系统首次对SiC的动态氧化进行了尝试。将SiC样品表面加热至2200 K，并在氧化过程中暴露于高速原子氧（0）流中100-600 s。根据所得结果，提出了SiC的主动/被动转变边界：1700-1800 K，氧分压100-1000 Pa。所获得的A/P过渡边界被认为接近于实际再入条件，其中氧化发生在模拟再入条件的高度离解和轻微电离的氧气流的条件下。
For the investigation of thermal protection system (TPS) for re-entry vehicles, arc-heated plasma wind tunnel was developed to simulate re-entry conditions. The surface temperatures of the samples were independently controlled of the plasma flow by installing a laser heating system. By using this system, first attempt of the dynamic oxidation of SiC was conducted. SiC sample surface was heated up to 2200 K and was exposed to high-speed atomic oxygen (0) flow during oxidation for 100-600 s. From the obtained results, active/passive transition border of SiC was suggested: 1700-1800 K at 100-1000 Pa area of oxygen partial pressure. Obtained A/P transition border is considered close to the actual re-entry condition wherein the oxidation occurs in the condition of highly dissociated and slightly ionized oxygen gas flow simulating the re-entry conditions.