Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n- Region Under Negative Bias Stress and Light Irradiation
Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n- Region Under Negative Bias Stress and Light Irradiation
复制标题
负偏压和光照射下 n 区顶栅 In-Ga-Zn-O 薄膜晶体管中光生电子引起的退化
DOI：
10.1109/led.2023.3258960
复制
发表时间：
2023
影响因子：
4.9
通讯作者：
Uraoka Yukiharu
中科院分区：
文献类型：
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作者：
Takeda Yujiro;Takahashi Takanori;Miyanaga Ryoko;Bermundo Juan Paolo S.;Uraoka Yukiharu
我们研究了顶栅In-Ga-Zn-O（IGZO）薄膜晶体管（TFT）在60°C下负栅偏压为−20 V和光照应力（NBTIS）后的正阈值电压（随峰和导通电流的变化）。这种退化可以分为三种类型的机制。1.低栅极电压下的驼峰是由IGZO/顶栅绝缘体（TGI）界面处的空穴捕获引起的子晶体管效应。2.的正位移是由IGZO/底栅绝缘体（BGI）界面处的光生电子捕获引起的。3.在IGZO/BGI界面区之间的界面处，由于光生电子的俘获，发生了还原。在IGZO/BGI和IGZO/TGI界面处以及IGZO/BGI界面区域，由俘获电子引起的电场促进沟道区的耗尽，这分别对应于有效栅极和漏极电压的下降。因此，在NBTIS下，由于光生电子的捕获，正位移和还原发生。基于我们提出的机制，这种退化被抑制的双栅极结构。
We investigated the positive threshold voltage (shift with hump and on-current (reduction in top-gate In-Ga-Zn-O (IGZO) thin film transistors (TFTs) after negative gate bias of −20 V at 60°C and light irradiation stress (NBTIS). This degradation can be classified into three types of mechanism. 1. The hump at low gate voltage (is a sub-transistor effect caused by hole trapping at the IGZO/top gate insulator (TGI) interface. 2. The positive shift ofis caused by the trapped photo-induced electrons at the IGZO/bottom gate insulator (BGI) interface. 3. Thereduction occurred due to trapped photo-induced electrons at interface betweenregion of IGZO/BGI interface. The electric field induced by trapped electron promotes depletion of the channel region at the IGZO/BGI and IGZO/TGI interface andregion of IGZO/BGI interface, which corresponds to a drop in effective gate and drain voltage, respectively. Thus, the positiveshift andreduction occurred due to trapping of photo-induced electron under NBTIS. Based on our proposed mechanism, this degradation was suppressed by the dual-gate structure.