Universal Conductance Fluctuation due to Development of Weak Localization in Monolayer Graphene
Universal Conductance Fluctuation due to Development of Weak Localization in Monolayer Graphene
复制标题
单层石墨烯弱局域化导致的普遍电导波动
DOI：
10.1002/pssb.201800515
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
K. Matsumoto
中科院分区：
文献类型：
--
作者：
D. Terasawa;A. Fukuda;A. Fujimoto ;Y. Kanai;K. Matsumoto
研究了单层石墨烯中两种量子干涉效应——通用电导涨落（UCF）和弱局域化（WL）之间的关系。我们发现UCF的局部最大值随栅极电压（费米能量）的变化表现出更强的WL电阻率校正。将实验结果与WL理论的预测结果进行比较，我们发现非弹性减相长度与弹性谷间散射长度的比值随UCF的变化而变化。此外，用WL电阻率校正理论也很好地描述了UCF振幅的温度依赖性。因此，我们提出UCF可以归因于石墨烯中的WL。此外，我们研究了垂直于石墨烯片的磁场存在下的UCF。我们对UCF磁场依赖性的快速傅里叶变换分析揭示了一个与由Aharonov-Bohm效应引起的相移有关的长度尺度。讨论了有效长度与弹性散射长度之间的关系。
The relationship between two quantum interference effects, the universal conductance fluctuation (UCF) and the weak localization (WL), is investigated in monolayer graphene. We find that the local maxima in the UCF as a function of the gate voltage (Fermi energy) show stronger WL resistivity correction. By comparing experimental results with the predictions of the WL theory, we find that the ratio of the inelastic dephasing length to the elastic intervalley scattering length varies in accordance with the UCF. Furthermore, the temperature dependence of the UCF amplitude is also well described by the theory of WL resistivity correction. Therefore, we propose that the UCF can be attributed to the WL in graphene. In addition, we investigate the UCF in the presence of the magnetic field perpendicular to the graphene sheet. Our fast Fourier transform analysis of the magnetic field dependence of the UCF reveals a length scale that is related to the phase shift caused by the Aharonov–Bohm effect. We discuss the relationship between this effective length and the elastic scattering lengths.