Characterization of via connections in silicon circuit boards
Characterization of via connections in silicon circuit boards
复制标题
硅电路板中通孔连接的表征
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
R. Carlson
中科院分区：
文献类型：
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作者：
J. Quine;H. Webster;H. Glascock;R. Carlson
导电过孔，隔离二氧化硅从散装硅晶片和用于互连带状线传输线的晶片的相对表面上，进行了分析。的净驻波比（虚拟驻波比）和插入损耗为一个单一的过孔和串扰或两个附近的过孔之间的耦合被确定为几何形状，频率和硅电阻率的函数。对于小通孔尺寸和高达1GHz的频率，分析预测低VSWR和低插入损耗，只要硅电阻率大于约100 Ω-cm。结果表明，串扰可以很小，主要是由于电感耦合。>
Conducting vias, isolated by silicon dioxide from a bulk silicon wafer and used to interconnect stripline transmission lines on opposite surfaces of the wafer, are analyzed. The net VSWR (virtual standing wave ratio) and insertion loss for a single via and the crosstalk or coupling between two nearby vias are determined as a function of geometry, frequency, and silicon resistivity. For small via dimensions and frequencies up to 1 GHz, the analysis predicts low VSWR and low insertion loss, provided the silicon resistivity is greater than about 100 Omega -cm. It is shown that crosstalk can be small, and is mostly due to inductive coupling. >