Electron-correlation driven capture and release in double quantum dots
Electron-correlation driven capture and release in double quantum dots
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DOI：
10.1088/0953-8984/28/7/075301
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发表时间：
2014-12
期刊：
影响因子：
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通讯作者：
Federico M. Pont;A. Bande;L. Cederbaum
中科院分区：
文献类型：
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作者：
Federico M. Pont;A. Bande;L. Cederbaum
最近，我们预测了原子间库仑电子俘获（ICEC）过程，一种长程电子相关驱动的俘获过程，可以在门控双量子点（DQD）中实现。在ICEC中，入射电子被一个量子点（QD）捕获，并且多余的能量用于从相邻的QD移除电子。在这项工作中，我们提出了系统的全三维电子动力学计算准一维模型的潜力，允许DQD的几何形状和反应概率的ICEC过程之间的连接的详细了解。我们推导出一个有效的一维方法，并表明其结果与使用全三维计算得到的结果相比非常好。这种方法大大减少了计算时间。各种DQD几何形状的ICEC过程可以发生的电子结构的调查澄清其显着的高概率在两个电子共振的存在下的起源。
We recently predicted that the interatomic Coulombic electron capture (ICEC) process, a long-range electron correlation driven capture process, is achievable in gated double quantum dots (DQDs). In ICEC an incoming electron is captured by one quantum dot (QD) and the excess energy is used to remove an electron from the neighboring QD. In this work we present systematic full three-dimensional electron dynamics calculations in quasi-one dimensional model potentials that allow for a detailed understanding of the connection between the DQD geometry and the reaction probability for the ICEC process. We derive an effective one-dimensional approach and show that its results compare very well with those obtained using the full three-dimensional calculations. This approach substantially reduces the computation times. The investigation of the electronic structure for various DQD geometries for which the ICEC process can take place clarify the origin of its remarkably high probability in the presence of two-electron resonances.