Enhanced ferroelectric and dielectric properties in (La0.7Ca0.3)MnO3-buffered (Bi0.5Na0.5)TiO3-based lead-free thin film by pulsed laser deposition
Enhanced ferroelectric and dielectric properties in (La0.7Ca0.3)MnO3-buffered (Bi0.5Na0.5)TiO3-based lead-free thin film by pulsed laser deposition
复制标题
DOI：
10.1016/j.jallcom.2012.11.095
复制
发表时间：
2013-03
影响因子：
6.2
通讯作者：
Chengchao Jin;F. F. Wang-F.;Q. Yao;Y. Tang;Tao Wang;W. Shi
中科院分区：
文献类型：
--
作者：
Chengchao Jin;F. F. Wang-F.;Q. Yao;Y. Tang;Tao Wang;W. Shi
采用脉冲激光沉积法在Pt/Ti/SiO2/Si基片上制备了Mn掺杂的0.935（Bi0.5Na0.5）TiO 3 -0.065BaTiO3（BNBMT）薄膜。结果表明，（La_（0.7）Ca_（0.3））MnO_3缓冲层的存在促进了（110）取向薄膜的生长，而不是（100）取向薄膜。双层膜的剩余极化强度Pr = 20μC/cm ~ 2，矫顽场Ecof = 10.2kV/mm，介电损耗在100 ~ 100 kHz范围内为0.10。这种增强的电性能在环境友好型铁电器件中具有潜在的应用价值。
Mn-doped 0.935(Bi0.5Na0.5)TiO3–0.065BaTiO3(BNBMT) thin film with a composition near the morphotropic phase boundary was grown on Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. It was found that the presence of a buffer layer of (La0.7Ca0.3)MnO3promoted growth of (110)-oriented thin film instead of (100) one. Enhanced ferroelectric properties were obtained for the bilayered film, with remnant polarization Prof ∼20μC/cm2and coercive field Ecof ∼10.2kV/mm. Dielectric loss was about 0.10 between 100Hz and 100kHz. The enhanced electrical properties exhibit potential in environmental-friendly ferroelectric devices.