Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic–Inorganic Hybrid Structure

Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic–Inorganic Hybrid Structure
复制标题

DOI:
10.1007/s11664-018-6365-8
复制
发表时间:
2018-05
影响因子:
2.1
通讯作者:
T. Abe;S. Uchida;Keita Tanaka;Takanobu Fujisawa;H. Kasada;K. Ando;K. Akaiwa;K. Ichino
T. Abe;S. Uchida;Keita Tanaka;Takanobu Fujisawa;H. Kasada;K. Ando;K. Akaiwa;K. Ichino
中科院分区:
工程技术4区
文献类型:
--
作者:
T. Abe;S. Uchida;Keita Tanaka;Takanobu Fujisawa;H. Kasada;K. Ando;K. Akaiwa;K. Ichino

文献摘要

相似文献

我们研究了PEDOT:PSS/ZnSSe有机-无机混合紫外雪崩光电二极管(UV-APD)的器件退化。采用分子束外延技术生长ZnSSe/n-GaAs晶片,用喷墨技术制备PEDOT:PSS窗口层。在N2(4 N)气氛中,我们观察到APD模式应力(~ 30 V)的快速降解,而我们观察到正向偏置电流应力和光电流应力没有显著变化。在真空条件下,我们没有观察到可检测的退化的APD模式应力的暗雪崩电流。因此,在APD模式应力下PEDOT:PSS/ZnSSe界面的退化是由N2气氛中残留的水蒸气或氧气引起的,可以通过真空封装来控制。
We investigated device degradation in PEDOT:PSS/ZnSSe organic–inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). ZnSSe/n-GaAs wafers were grown by molecular beam epitaxy, and PEDOT:PSS window layers were formed by inkjet technique. We observed rapid degradation with APD-mode stress (~ 30 V) in the N2(4 N) atmosphere, while we observed no marked change in forward bias current stress and photocurrent stress. In the case of a vacuum condition, we observed no detectable degradation in the dark avalanche current with APD-mode stress. Therefore, the degradation in the PEDOT:PSS/ZnSSe interface under the APD-mode stress was caused by the residual water vapor or oxygen in the N2atmosphere and could be controlled by vacuum packaging.