Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic–Inorganic Hybrid Structure
Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic–Inorganic Hybrid Structure
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DOI:
10.1007/s11664-018-6365-8
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发表时间:
2018-05
影响因子:
2.1
通讯作者:
T. Abe;S. Uchida;Keita Tanaka;Takanobu Fujisawa;H. Kasada;K. Ando;K. Akaiwa;K. Ichino
中科院分区:
文献类型:
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作者:
T. Abe;S. Uchida;Keita Tanaka;Takanobu Fujisawa;H. Kasada;K. Ando;K. Akaiwa;K. Ichino
We investigated device degradation in PEDOT:PSS/ZnSSe organic–inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). ZnSSe/n-GaAs wafers were grown by molecular beam epitaxy, and PEDOT:PSS window layers were formed by inkjet technique. We observed rapid degradation with APD-mode stress (~ 30 V) in the N2(4 N) atmosphere, while we observed no marked change in forward bias current stress and photocurrent stress. In the case of a vacuum condition, we observed no detectable degradation in the dark avalanche current with APD-mode stress. Therefore, the degradation in the PEDOT:PSS/ZnSSe interface under the APD-mode stress was caused by the residual water vapor or oxygen in the N2atmosphere and could be controlled by vacuum packaging.