Effect of irradiation damage on corrosion of 4H-SiC in FLiNaK molten salt
Effect of irradiation damage on corrosion of 4H-SiC in FLiNaK molten salt
复制标题
辐照损伤对4H-SiC在FLiNaK熔盐中腐蚀的影响
DOI：
10.1016/j.corsci.2017.05.028
复制
发表时间：
2017
影响因子：
8.3
通讯作者：
Yan Long
中科院分区：
文献类型：
--
作者：
Li Jianjian;Huang Hefei;Huang Qing;Tang Ming;Zhao Bin;Ji Gengwu;Zhang Wei;Xie Ruobing;Yan Long
研究了4H-碳化硅在FLiNaK熔盐(650℃)中的腐蚀行为，用70keV硅离子预辐照至650℃下的2.5 dpa，以阐明辐照对腐蚀的影响。4H-碳化硅的辐照区域被熔盐剥离，腐蚀深度与辐照损伤深度基本一致。熔盐腐蚀导致辐照后的4H-碳化硅表面硅元素的损失和富碳相的形成。辐照引起的Si-C键断裂是造成碳化硅辐照腐蚀的重要原因。
The corrosion behavior of 4H-SiC in the FLiNaK molten salt (650 °C), pre-irradiated with 70-keV Si ions to 2.5 dpa at 650 °C, was investigated in order to clarify the effect of irradiation on corrosion. The irradiated region of 4H-SiC is peeled off by the molten salt, and the corrosion depth is nearly consistent with the irradiation damage depth. Molten salt corrosion leads to the loss of Si element and the formation of carbon-rich phase in irradiated 4H-SiC surface. The broken of Si-C bonds induced by irradiation plays a key role in the irradiation-assisted corrosion of SiC.