Comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation
Comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation
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DOI：
10.1021/jp0458708
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发表时间：
2005-02-24
影响因子：
3.3
通讯作者：
Park, J
中科院分区：
文献类型：
--
作者：
Bae, SY;Na, CW;Park, J
采用热蒸发法制备了高浓度掺镓、铟、锡的氧化锌纳米线。对于所有纳米线，掺杂含量定义为X/(锌+X)原子比，其中X是掺杂元素，约为15%。纳米线由纤锌矿-氧化锌单晶组成，平均直径为80 nm。垂直排列的掺镓纳米线的生长方向为[001]，而随机倾斜的掺In和掺锡纳米线的生长方向为[010]。提出了生长方向与垂直取向之间的关系。X-射线衍射峰的展宽反映了掺杂引起的晶格畸变，其中锡掺杂的展宽最为显著。掺锡的氧化锌纳米线的吸收和光致发光向比掺In和掺镓的纳米线低的能区移动，这可能是由于锡的电荷密度较大所致。
ZnO, nanowires doped with a high concentration Ga, In, and Sn were synthesized via thermal evaporation. The doping content defined as X/(Zn + X) atomic ratio, where X is the doped element, is about 15% for all nanowires. The nanowires consist of single-crystalline wurtzite ZnO crystal, and the average diameter is 80 nm. The growth direction of vertically aligned Ga-doped nanowires is [001], while that of randomly tilted In- and Sn-doped nanowires is [010]. A correlation between the growth direction and the vertical alignment has been suggested. The broaden X-ray diffraction peaks indicate the lattice distortion caused by the doping, and the broadening is most significant in the case of Sn doping. The absorption and photoluminescence of Sn-doped ZnO nanowires shift to the lower energy region than those of In- and Ga-doped nanowires, probably due to the larger charge density of Sn.