Electric-field-driven hole carriers and superconductivity in diamond
Electric-field-driven hole carriers and superconductivity in diamond
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电场驱动的空穴载流子和金刚石中的超导性
DOI：
10.1103/physrevb.87.214506
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and A. J. Freeman
中科院分区：
文献类型：
--
作者：
K. Nakamura;S. H. Rhim;A. Sugiyama;K. Sano;T. Akiyama;T. Ito;M. Weinert;and A. J. Freeman
利用第一性原理计算了电场驱动的氢化金刚石（110）表面超导性。表面的氢原子有效地保持了金刚石的本质共价性，而外部负电场诱导的空穴载流子导致了金属表面区域。重要的是，空穴载流子的浓度，限制在几个碳层的厚度5 -10毫米以下的表面，超过10厘米，这是大于临界空穴密度负责超导性的掺硼金刚石，而计算的电子-声子耦合常数的大小是可比的，这表明超导性与增强的临界场的可能性。
First-principles calculations of electric-field-driven superconductivity at the hydrogenated diamond (110) surface are presented. While the hydrogens on the surface effectively maintain the intrinsiccovalent nature of diamond, the hole carriers induced by an external negative electric field-field) lead to a metallic surface region. Importantly, the concentration of hole carriers, confined within a few carbon layers of thickness5–10 Å below the surface, exceeds 10cm, which is larger than the critical hole density responsible for superconductivity in the boron-doped diamond, while the calculated electron-phonon coupling constants are comparable in magnitude, suggesting the possibility of superconductivity with enhanced critical field.