Control of electronic structure in Cu(In, Ga)(S, Se)2 for high-efficiency solar cells
Control of electronic structure in Cu(In, Ga)(S, Se)2 for high-efficiency solar cells
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高效太阳能电池中 Cu(In, Ga)(S, Se)2 电子结构的控制
DOI：
10.35848/1347-4065/ab69e0
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发表时间：
2019
影响因子：
1.5
通讯作者：
T. Wada
中科院分区：
文献类型：
--
作者：
T. Maeda;R. Nakanishi;M. Yanagita;T. Wada
我们制作了Cu(In_(1-x)Gax)(SySe_(1-y))_2(CIGSSe)五元体系带隙能量的三维(3D)图。随着Ga/(Ga+In)(GGi，x)和S/(S+Se)(Sse，y)比值的增加，CIGSe系统的禁带能从CuInSe_2(x=0.0和y=0.0)单调增加。我们还根据光电子产额谱测量的电离能和带隙能量绘制了CIGSSe系统价带极大值(VBMS)和导带极小值(CBMS)的三维能级图。S对CuInSe_2中Se的替代作用与Ga对In的替代作用不同。CIGSSe系统的VBM水平没有明显变化，而煤层气水平随着GGI比率x的增加而增加，而VBM水平随着SSSe比率y的增加而下降，CBM水平随着SSSe比率y的增加而增加。
We have made a three-dimensional (3D) map of the band-gap energy of the Cu(In1–xGax)(SySe1–y)2 (CIGSSe) quinary system. The band-gap energy of the CIGSSe system monotonically increased from CuInSe2 (x = 0.0 and y = 0.0) with simultaneously increasing Ga/(Ga+In) (GGI, x) and S/(S + Se) (SSSe, y) ratios. We also made a 3D map of the energy levels of the valence band maxima (VBMs) and conduction band minima (CBMs) of the CIGSSe system from the ionization energies measured by photoemission yield spectroscopy and the band-gap energies. The substitution effect of S for Se in CuInSe2 was different from that of Ga for In. The VBM level of the CIGSSe system did not change significantly and the CBM level increased with an increasing GGI ratio, x. On the other hand, the VBM level decreased and the CBM level increased with an increasing SSSe ratio, y.