Enhanced giant magnetoresistance in Ni-doped antipervoskite compounds GaCMn3−xNix(x=0.05,0.10)
Enhanced giant magnetoresistance in Ni-doped antipervoskite compounds GaCMn3−xNix(x=0.05,0.10)
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DOI：
10.1063/1.3268786
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发表时间：
2009-12
影响因子：
4
通讯作者：
B. Wang;P. Tong;Y. Sun;Liang Li;Weihua Tang;W. Lu;Xuming Zhu;Z. R. Yang;Wen-li Song
中科院分区：
文献类型：
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作者：
B. Wang;P. Tong;Y. Sun;Liang Li;Weihua Tang;W. Lu;Xuming Zhu;Z. R. Yang;Wen-li Song
报道了掺镍反钙钛矿化合物GaCMn3−xNix具有较大温度跨度的增强负巨磁电阻效应。在约110K和50K的温度范围内，当x=0.05时，观测到的巨磁电阻分别在∼为75%(85kOe)和超过60%(50kOe)时达到峰值。与母体GaCMn3相比，掺镍样品的巨磁电阻效应与部分抑制的反铁磁(AFM)基态有关，在外加磁场的作用下，有利于高阻AFM态向低阻斜铁磁态的转变。
We report an enhanced negative giant magnetoresistance (GMR) with larger temperature span in Ni-doped antipervoskite compounds GaCMn3−xNix. The observed GMR can peak at ∼75% (at 85 kOe) and exceed 60% (at 50 kOe) over a temperature span of approximate 110 and 50K for x=0.05 and 0.10, respectively. Compared with the parent GaCMn3, the well-enhanced GMR in Ni-doped samples is suggested to be associated with the partially suppressed antiferromagnetic (AFM) ground state, which favors the transition from the high-resistivity AFM state to the low-resistivity canted ferromagnetic state under an external magnetic field.