n-Doping of thermally polymerizable fullerenes as an electron transporting layer for inverted polymer solar cells
n-Doping of thermally polymerizable fullerenes as an electron transporting layer for inverted polymer solar cells
复制标题
DOI：
10.1039/c1jm10214a
复制
发表时间：
2011-01-01
影响因子：
--
通讯作者：
Jen, Alex K. -Y.
中科院分区：
文献类型：
--
作者：
Cho, Namchul;Yip, Hin-Lap;Jen, Alex K. -Y.
合成了一种新型的[6，6]-苯基-C-61-丁酸甲基苯乙烯酯(PCBM-S)，并将其作为电子传输界面层用于体异质结聚合物太阳电池。从溶液中沉积出PCBM-S膜后，通过后热处理使PCBM-S中的苯丙基聚合，形成耐常用有机溶剂的坚韧的膜。这使得可以在不侵蚀PCBM-S层的情况下进行上体异质结薄膜的固溶处理。此外，还通过掺杂十甲基钴来提高薄膜的电导率，使薄膜的功率转换效率从1.24%提高到2.33%。器件性能的改善是由于n掺杂的PCBM-S薄膜串联电阻的降低和电子提取性能的改善。
A novel [6,6]-phenyl-C-61-butyric acid methyl styryl ester (PCBM-S) was synthesized and employed as an electron transporting interfacial layer for bulk heterojunction polymer solar cells with an inverted device configuration. After the deposition of PCBM-S film from solution, the styryl groups of PCBM-S were polymerized by post-thermal treatment to form a robust film which is resistive to common organic solvents. This allows the solution processing of upper bulk heterojunction film without eroding the PCBM-S layer. Additionally, the PCBM-S was n-doped with decamethylcobaltocene (DMC) to increase the conductivity of the film, which resulted in a significantly improved power conversion efficiency from 1.24% to 2.33%. The improved device performance is due to the decrease of series resistance and improved electron extraction property of the n-doped PCBM-S film.