Auger-free luminescence due to interatomic p-d transition and self-trapped exciton luminescence in Rb2ZnCl4 crystals
Auger-free luminescence due to interatomic p-d transition and self-trapped exciton luminescence in Rb2ZnCl4 crystals
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Rb2ZnCl4 晶体中原子间 p-d 跃迁和自陷激子发光导致的无俄歇发光
DOI：
10.1016/j.jlumin.2012.05.009
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发表时间：
2012
影响因子：
3.6
通讯作者：
M. Sasaki
中科院分区：
文献类型：
--
作者：
A. Ohnishi;M. Saito;M. Kitaura;M. Itoh;M. Sasaki
报道了Rb_2ZnCl_4的无俄歇（AF）发光，在4.5和6.3eV处出现两个带。这种发光起源于Cl 3 p价电子到Zn 3d最外层核孔的辐射跃迁。本工作是首次在卤化物晶体中观察到原子间p-d跃迁引起的AF发光。两个AF发光带的出现表明存在两种类型的AF转换后的核心孔创建。在1.9eV处还出现了一个斯托克斯位移很大的发光带。该带在基本吸收边处具有激发阈值，并且归因于自陷激子的辐射衰变。
It is reported that Auger-free (AF) luminescence appears with two bands at 4.5 and 6.3eV in Rb2ZnCl4. This luminescence originates from a radiative transition of the Cl 3p valence electrons into the Zn 3d outermost-core holes. The present work is the first observation of AF luminescence due to interatomic p–d transitions in halide crystals. The appearance of two AF luminescence bands suggests the existence of two types of AF transitions following core hole creation. A largely Stokes-shifted luminescence band is also found to appear at 1.9eV. This band has an excitation threshold at the fundamental absorption edge, and is ascribed to the radiative decay of a self-trapped exciton.