Enhanced thermoelectric performance in Cd doped CuInTe2 compounds
Enhanced thermoelectric performance in Cd doped CuInTe2 compounds
复制标题
增强 Cd 掺杂 CuInTe2 化合物的热电性能
DOI：
10.1063/1.4872250
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发表时间：
2014-04-28
影响因子：
3.2
通讯作者：
Chen, L.
中科院分区：
文献类型：
--
作者：
Cheng, N.;Liu, R.;Chen, L.
采用熔融退火法制备了CuIn_（1-x）Cd_xTe_2（x = 0，0.02，0.05和0.1）材料，并通过放电等离子烧结获得了高致密的块体样品。X射线衍射数据证实，在所有样品中获得了几乎纯的黄铜矿结构。由于Cd在In位的取代，载流子浓度大大增加，导致电导率和功率因数大大增强。采用单抛物带模型描述了CuInTe 2的电输运性质，并对低温下的霍尔迁移率进行了模拟。结合理论模型和实验数据，提出了CuInTe 2中最佳载流子浓度的概念，解释了Cd掺杂CuInTe 2中功率因数显著提高的原因。此外，由于Cd和In原子之间的原子质量和半径波动，额外的声子散射降低了热导率。在CuIn0.98Cd0.02Te2和CuIn0.9Cd0.1Te2样品中观察到最大的zTs，在室温下提高了100%以上，在600 K下提高了20%左右。(C)2014 AIP Publishing LLC.
CuIn1-xCdxTe2 materials (x = 0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe2 and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe2 is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe2. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn0.98Cd0.02Te2 and CuIn0.9Cd0.1Te2 samples, which are improved by over 100% at room temperature and around 20% at 600 K. (C) 2014 AIP Publishing LLC.