Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures
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DOI：
10.1063/1.3456392
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发表时间：
2010-06
影响因子：
4
通讯作者：
S. C. Davies;D. Mowbray;F. Ranalli;Tao Wang
中科院分区：
文献类型：
--
作者：
S. C. Davies;D. Mowbray;F. Ranalli;Tao Wang
报道了不同势垒厚度的InGaN/GaN多层量子点结构的研究。随着势垒厚度的增加，观察到光致发光（PL）峰值能量的红移和PL衰减寿命的增加。这是由于内部电场的大小增加和通过量子限制斯塔克效应对电子结构的影响。理论表面积分势计算支持这一解释。4 nm的最小势垒厚度似乎是形成单独的均匀QD层所需的。
A study of InGaN/GaN multiple layer quantum dot (QD) structures with varying barrier thicknesses is reported. With increasing barrier thickness both a redshift in the photoluminescence (PL) peak energy and increase in the PL decay lifetime is observed. This is attributed to an increase in the size of the internal electric field and the influence on the electronic structure via the quantum confined Stark effect. Theoretical surface integral potential calculations support this interpretation. A minimum barrier thickness of 4 nm appears to be required for the formation of separate homogeneous QD layers.